2SB1204 TO-251 Bipolar Transistor

Material of Transistor : Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 130 MHz

Collector Capacitance (Cc): 95 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -