2N5631 MOTOROLA TRANSISTOR

Specification Type Designator: 2N5631 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 200 W Maximum Collector-Base Voltage |Vcb|: 140 V Maximum Collector-Emitter Voltage |Vce|: 140 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 20 A Max. Operating Junction Temperature (Tj): 200 °C Transition Frequency (ft): 1 MHz Collector Capacitance (Cc): 500 pF Forward Current Transfer Ratio (hFE), MIN: 15 Noise Figure, dB: -