2SB1204 TO-251 Bipolar Transistor

Material of Transistor : Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 20 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 50 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 8 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 130 MHz Collector Capacitance (Cc): 95 pF Forward Current Transfer Ratio (hFE), MIN: 70 Noise Figure, dB: -