| Characteristic | Specification |
|---|
| Ability | 128 GB |
| Interface | PCIe Gen3x4 (NVMe 1.3) |
| Form factor | M.2 2280 |
| Sequential Reading | Up to 1800 MB/s |
| Sequential Writing | Up to 600 MB/s |
| Random Reading (IOPS) | Up to 100,000 IOPS |
| Random Writing (IOPS) | Up to 130,000 IOPS |
| Controller | Realtek RTS5763DL |
| NAND type | 3D TLC (usually 64 layers) |
Performance and Reliability Features
- Caching technologies : This model does not have a dedicated DRAM cache. Instead, it uses the Host Memory Buffer (HMB) and SLC Caching to maintain smooth transfer speeds.
- Cache behavior : The pseudo-SLC cache is approximately 25 GB . Once this cache is full, the write speed drops to approximately 59 MB/s . [1]
- Durability (Endurance) : The 128GB model is rated at 60 TBW (Total Bytes Written). Some reports indicate up to 80 TBW depending on the regional variant. [, 3]
- Reliability (MTBF) : The mean time between failures is estimated at 1.8 million hours . [1]
- Error correction : Incorporates LDPC ECC (Low Density Error Correction Code) technology to ensure data integrity