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SAMSUNG
NVME Samsung PM9B1, Western Digital, 512 GB
DZD 16 500
Voir sur le site du vendeurLes prix et la disponibilité sont mis à jour quotidiennement. Veuillez vérifier sur le site du vendeur avant d'acheter.
Description
Description
Solid-State-Drive
| Capacity: | 512 GB |
|---|---|
| Variants: | 256 GB 512 GB 1 TB |
| Overprovisioning: | 35.2 GB / 7.4 % |
| Production: | Unknown |
| Released: | 2022 |
| Part Number: | MZVL4512HBLU-00BL7 |
| Market: | Consumer |
Physical
| Form Factor: | M.2 2280 (Single-Sided) |
|---|---|
| Interface: | PCIe 4.0 x4 |
| Protocol: | NVMe 1.4 |
| Power Draw: | Unknown |
Controller
| Manufacturer: | Marvell |
|---|---|
| Name: |
88SS1322 Whistler Plus
|
| Architecture: | Arm® Cortex®-R5 |
| Core Count: | Triple-Core |
| Foundry: | TSMC FinFET |
| Process: | 12 nm |
| Flash Channels: | 4 @ 1,200 MT/s |
| Chip Enables: | 4 |
| Controller Features: | HMB (enabled) |
NAND Flash
| Manufacturer: | Samsung |
|---|---|
| Name: | V-NAND V6 |
| Part Number: | K9OUGY8J5B-CCK0 |
| Type: | TLC |
| Technology: | 128-layer |
| Speed: | 1200 MT/s |
| Capacity: | 1 chip @ 4 Tbit |
| Toggle: | 4.0 |
| Topology: | Charge Trap |
| Process: | 20 nm |
| Die Size: | 102 mm² (5.0 Gbit/mm²) |
| Dies per Chip: | 8 dies @ 512 Gbit |
| Planes per Die: | 2 |
| Decks per Die: | 1 |
| Word Lines: | 136 per NAND String 94.1% Vertical Efficiency |
| Read Time (tR): | 45 µs |
| Program Time (tProg): | 390 µs |
| Block Erase Time (tBERS): | 3.5 ms |
| Die Read Speed: | 711 MB/s |
| Die Write Speed: | 82 MB/s |
| Endurance: (up to) |
3000 P/E Cycles |
| Page Size: | 16 KB |
DRAM Cache
| Type: | None |
|---|---|
| Host-Memory-Buffer (HMB): | 64 MB |
Performance
| Sequential Read: | 3,500 MB/s |
|---|---|
| Sequential Write: | 2,500 MB/s |
| Random Read: | 430,000 IOPS |
| Random Write: | 400,000 IOPS |
| Endurance: | Unknown |
| Warranty: | Unknown |
| SLC Write Cache: | Yes |
